兆竑科技有限公司

RHEED Electron Gun 　Since the clear RHEED image was shown by Dr. Shozo Ino in 1977, the Reflection High Energy Electron Diffraction (RHEED) method has come to be widely recognized as the surface analysis technique replaced with Low Energy Electron Diffraction (LEED). The RHEED electron gun of Vieetech Japan/Choshu is newly designed and developed by one of the engineers engaged in development of this RHEED electron gun in those days. 　Since RHEED does not become the hindrance of deposition in geometry unlike LEED, in-situ observation during deposition can be performed. Therefore, RHEED serves as technology indispensable to thin film growth, such as the structural analysis of the crystal surface, monitoring the thin film production process and controlling deposition process now. 　In order to obtain a clear RHEED image, the electron gun which generates high focus, high parallel, and the electron beam of high luminosity is needed. And for RHEED intensity analysis or Phase-Locked Epitaxy (PLE), it is indispensable to generate the stable beam. In order to realize these performances, our electron gun incorporates much technology acquired from many years of research and experience. 　There are an anode, wehnelt, filament form, those position relations, bias voltage, etc. as an element which determines focus an electron beam, parallelism and luminosity. Our electron gun is optimized by previous research. 　A filament, wehnelt and center axial alignment of an anode are very important things in the optics of an electron gun. If these adjustments are not in complete, it cannot meet the satisfied performance. Therefore, in our electron gun, it is possible to tune wehnelt and axial alignment of an anode finely during emitting an electron beam (since axial alignment is performed before shipment, there are no minor adjustments required by the user).
15KeV / 30KeV / 50KeV.